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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
0.9
* Notes :
1. V GS = 0 V
2. I D = 250 μ A
1.0
0.5
* Notes :
1. V GS = 10 V
2. I D = 3.5 A
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
150
200
T J , Junction Temperature [ ° C]
Figure 9. Maximum Safe Operating Area
T J , Junction Temperature [ ° C]
Figure 10. Maximum Drain Current
vs. Case Temperature
10
10
10
10
2
1
0
-1
Operation in This Area
is Limited by R DS(on)
* Notes :
1. T C = 25 ° C
2. T J = 150 ° C
3. Single Pulse
DC
100 us
1 ms
10 ms
10.0
7.5
5.0
2.5
10
10
10
10
10
-2
0
1
2
3
0.0
25
50
75
100
125
150
V DS , Drain-Source Voltage [V]
T C , Case Temperature [ ° C]
Figure 11. Transient Thermal Response Curve
10
0
D = 0 .5
0 .2
0 .1
* N o te s :
1 . Z θ J C (t) = 1 .5 ° C /W M a x.
2 . D u ty F a P to r, D = t 1 /t 2
10
-1
0 .0 5
0 .0 2
0 .0 1
c
DM
3 . T JM - T C = P D M * Z θ J C (t)
t 1
P DM
t 2
10
-2
s in g le p u ls e
t 1
t 2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
t 1 , Rectangular Pulse Duration [sec]
?2008 Fairchild Semiconductor Corporation
FCI7N60 Rev. C1
4
www.fairchildsemi.com
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